Time-domain computing for Boolean logic using STT-MRAM

Stateful STT-MRAM- Based Logic for Beyond–Von Neumann Computing

Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects

Spin-transfer torque (STT) switching demonstrated in submicron sized magnetic tunnel junctions (MTJs) has stimulated considerable interest for developments of STT switched magnetic random access memory (STT-MRAM). Remarkable progress in STT switching with MgO MTJs and increasing interest in STTMRAM in semiconductor industry have been witnessed in recent years. This paper will present a review o...

Failure and reliability analysis of STT-MRAM

Spin Transfer Torque Magnetic RAM (STT-MRAM) promises low power, great miniaturization prospective (e.g. 22 nm) and easy integration with CMOS process. It becomes actually a strong non-volatile memory candidate for both embedded and standalone applications. However STT-MRAM suffers from important failure and reliability issues compared with the conventional solutions based on magnetic field swi...

STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier

SUMMARY This paper reports a 65 nm 8 Mb spin transfer torque mag-netoresistance random access memory (STT-MRAM) operating at a single supply voltage with a process-variation-tolerant sense amplifier. The proposed sense amplifier comprises a boosted-gate nMOS and negative-resistance pMOSs as loads, which maximizes the readout margin at any process corner. The STT-MRAM achieves a cycle time of 1....

Cascaded Channel Model and Analysis for STT-MRAM

Spin-torque transfer magnetic random access memory (STTMRAM) is a promising emerging non-volatile memory (NVM) technology which shows high potential for replacing the dynamic random access memory (DRAM), as well as for various embedded applications. However, STT-MRAM suffers from process variation induced variations of the access transistor size, the magnetic tunneling junction (MTJ) geometry a...